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Indium Phosphide (InP) Wafer Fab


        Telecom, DATA ceNTeR & liDAR cHiP DeViceS, VeRTicAlly-iNTeGRATeD mANufAcTuRiNG



        EMCORE owns and operates its world-class 7,000 square foot InP semiconductor wafer fabrication plant at our corporate
        headquarters in Alhambra, California. The plant supports development of best-in-class Telecom/Wireless, Data Center and
        LiDAR chip devices, as well as EMCORE’s vertically-integrated manufacturing for its laser, transmitter and receiver products.
























        EMCORE’s semiconductor wafer fabrication facility supports 2” and 3” wafer        Wafer Fab Highlights
        process for InP-based devices including laser, APD & PIN photodetectors.          n  7,000 square foot, class 1,000 clean
        The plant features MOCVD reactors for 3x3” or 6x2” wafers, plus                     room space
        stepper, wafer track, ICP, RIE, diffusion, metal and dielectric                   n  MOCVD reactors
        deposition, and cleaving/dicing. Our highly-experienced tech-
        nical team has expertise in device design, epitaxial growth,                      n  2” and 3” wafer process for
                                                                                            InP and LiNbO  devices
        wafer processing, device characterization and COB/TO/OSA                                       3
        sub-assembly from development through manufacturing.                              n  Specialty chips for telecom and
                                                                                            data center
                                                                                          n  High-power gain chips
        Specialty Chips for Telecom/Wireless,
        Data Center, Optical Sensing & LiDAR                                              n  High-power, narrow linewidth LiDAR
                                                                                            laser chips
        EMCORE’s scientists and engineers are designing custom specialty chips to customer specifications   n  GPON laser, APD & PIN
        for ultra-high-speed transmission and power for next-generation telecom and data center applica-  photodetector chips
        tions. Additionally, EMCORE is developing specialized high-power, narrow linewidth laser chips and   n  2.5 Gbps to 25 Gbps devices
        SOA (Semiconductor Optical Amplifier) devices for LIDAR applications.
                                                                                          n  CWDM wavelengths capable
        2.5G to 25G DFB Laser, Avalanche & PIN Photodiode,                                n  Strong, highly-experienced
        Top & Bottom Illuminated Chips and COB                                              technical team

        EMCORE’s latest series of DFB laser diode chips and APD & PIN photodiode chips are designed for
        uncooled, high-speed Next-Gen PON applications for triple-play voice, video and data applications.
        A variety of wavelengths are supported. They are designed to perform the E/O conversion in a PON
        system. They have high-responsivity, low-capacitance and low noise equivalent power. Bottom il-
        luminated APDs are mounted on Chip-On-Block (COB) for ease of assembly into receiver modules.












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